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agilent hssr-7110, hssr-7111 & hssr-7112, hssr-711e 5962-9314001, 5962-9314002 90 v/1.0 ? ? ? ? ? , hermetically sealed, power mosfet optocoupler technical data description the hssr-7110, hssr-7111, hssr-7112, hssr-711e and smd 5962-93140 are single channel power mosfet optocouplers, constructed in eight-pin, hermetic, dual-in- line, ceramic packages. the devices operate exactly like a solid-state relay. the products are capable of operation and storage over the full military temperature range and may be purchased as a standard product (hssr-7110), with full mil-prf-38534 class h testing (hssr-7111 and hssr- 7112), with mil-prf- 38534 class e testing (class k features ? ? ? ? ? dual marked with device part number and dscc standard microcircuit drawing ? ? ? ? ? ac/dc signal & power switching ? ? ? ? ? compact solid-state bidirectional switch ? ? ? ? ? manufactured and tested on a mil-prf-38534 certified line ? ? ? ? ? qml-38534 ? ? ? ? ? mil-prf-38534 class h ? ? ? ? ? modified space level processing available (class e) ? ? ? ? ? hermetically sealed 8-pin dual in-line package ? ? ? ? ? small size and weight ? ? ? ? ? performance guaranteed over -55c to +125c ? ? ? ? ? connection a 0.8 a, 1.0 ? ? ? ? ? ? ? ? ? ? connection b 1.6 a, 0.25 ? ? ? ? ? ? ? ? ? ? 1500 vdc withstand test voltage ? ? ? ? ? high transient immunity ? ? ? ? ? 5 amp output surge current functional diagrams caution: it is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by esd. with exceptions) (hssr-711e) or from the dscc standard microcircuit drawing (smd) 5962-93140. details of the class e program may be found on page 11 of this datasheet. applications ? ? ? ? ? military and space ? ? ? ? ? high reliability systems ? ? ? ? ? standard 28 vdc and 48 vdc load driver ? ? ? ? ? standard 24 vac load driver ? ? ? ? ? aircraft controls ? ? ? ? ? ac/dc electromechanical and solid state relay replacement ? ? ? ? ? i/o modules ? ? ? ? ? harsh industrial environments truth table input output h closed l open connection a ac/dc connection 2 3 4 1 6 7 5 8 nc nc + - + - connection b dc connection i f v f i o v o 2 3 4 1 6 7 5 8 nc nc + - + - i f v f i o v o
2 all devices are manufactured and tested on a mil-prf- 38534 certified line and are included in the dscc qualified manufacturers list, qml-38534 for hybrid microcircuits. each device contains an algaas light emitting diode optically coupled to a photovoltaic diode stack which drives two discrete power mosfets. the device operates as a solid- state replacement for single- pole, normally open, (1 form a) relays used for general purpose switching of signals and loads in high reliability applications. the devices feature logic level input control and very low output on-resistance, making them suitable for both ac and dc loads. connection a, as shown in the functional diagram, allows the device to switch either ac or dc loads. connection b, with the polarity and pin configuration as shown, allows the device to switch dc loads only. the advantage of connection b is that the on-resistance is significantly reduced, and the output current capability increases by a factor of two. caution: maximum switching frequency C care should be taken during repetitive switching of loads so as not to exceed the maximum output current, maximum output power dissipation, maximum case temperature, and maximum junction temperature. the devices are convenient replacements for mechanical and solid state relays where high component reliability with standard footprint lead configuration is desirable. devices may be purchased with a variety of lead bend and plating options. see selection guide table for details. standard microcircuit drawing (smd) parts are available for each package and lead style. the hssr-7110, hssr-7111, hssr-7112, hssr-711e and smd 5962-93140 are designed to switch loads on 28 vdc power systems. they meet 80 v surge and 600 v spike requirements. selection guide?package styles and lead configuration options agilent part number and options commercial hssr-7110 mil-prf-38534 class h hssr-7111 hssr-7112 mil-prf-38534 class e hssr-711e standard lead finish gold plate gold plate gold plate solder dipped* option #200 option -200 option -200 butt joint/gold plate option #100 option -100 gull wing/soldered* option #300 option -300 crew cut/gold plate option #600 smd part # prescript for all below 5962- 5962- either gold or soldered 9314001hpx 9314002hpx 9314001epx gold plate 9314001hpc 9314002hpc 9314001epc solder dipped* 9314001hpa 9314002hpa 9314001epa butt joint/gold plate 9314001hyc 9314002hyc butt joint/soldered* 9314001hya 9314002hya gull wing/soldered* 9314001hxa 9314002hxa crew cut/gold plate 9314001hzc crew cut/soldered* 9314001hza * solder contains lead
3 device marking absolute maximum ratings outline drawing 8-pin dip through hole parameter symbol min. max. units note storage temperature range t s -65 +150 c operating ambient temperature t a -55 +125 c junction temperature t j +150 c operating case temperature t c +145 c 1 lead solder temperature (1.6 mm below seating plane) 260 for 10 s c average input current i f 20 ma peak repetitive input current (pulse width < 100 ms; duty cycle < 50%) i fpk 40 ma peak surge input current (pulse width < 0.2 ms; duty cycle < 0.1%) i fpk surge 100 ma reverse input voltage v r 5v average output current - figure 2 connection a i o 0.8 a connection b 1.6 a single shot output current - figure 3 connection a (pulse width < 10 ms) i opk surge 5.0 a connection b (pulse width < 10 ms) 10.0 a output voltage connection a v o -90 90 v connection b -90 90 v average output power dissipation - figure 4 800 mw 2 thermal resistance maximum output mosfet junction to case ? jc = 15c/w esd classification (mil-std-883, method 3015) .......................... ( ), class 2 compliance indicator,* date code, suffix a qyywwz xxxxxx xxxxxxx xxx xxx 50434 country of mfr. agilent cage code* agilent designator dscc smd* pin one/ esd ident agilent p/n dscc smd* * qualified parts only (if needed) 3.81 (0.150) min. 4.32 (0.170) max. 9.40 (0.370) 9.91 (0.390) 0.51 (0.020) max. 2.29 (0.090) 2.79 (0.110) 0.51 (0.020) min. 0.76 (0.030) 1.27 (0.050) 8.13 (0.320) max. 7.36 (0.290) 7.87 (0.310) 0.20 (0.008) 0.33 (0.013) 7.16 (0.282) 7.57 (0.298) note: dimensions in millimeters (inches).
4 option description 100 surface mountable hermetic optocoupler with leads trimmed for butt joint assembly. this option is available on commercial and hi-rel product. 200 lead finish is solder dipped rather than gold plated. this option is available on commercial and hi-rel product. dscc drawing part numbers contain provisions for lead finish. 300 surface mountable hermetic optocoupler with leads cut and bent for gull wing assembly. this option is available on commercial and hi-rel product. this option has solder dipped leads. 600 surface mountable hermetic optocoupler with leads trimmed for butt joint assembly. this option is available on commercial and hi-rel product. recommended operating conditions hermetic optocoupler options note: dimensions in millimeters (inches). parameter symbol min. max. units note input current (on) i f(on) 520ma10 input current (on) i f(on) 10 20 ma 11 input voltage (off) v f(off) 00.6 v operating temperature t a -55 +125 c 1.14 (0.045) 1.40 (0.055) 4.32 (0.170) max. 0.51 (0.020) max. 2.29 (0.090) 2.79 (0.110) 0.51 (0.020) min. 7.36 (0.290) 7.87 (0.310) 0.20 (0.008) 0.33 (0.013) 0.51 (0.020) min. 4.57 (0.180) max. 0.51 (0.020) max. 2.29 (0.090) 2.79 (0.110) 1.40 (0.055) 1.65 (0.065) 9.65 (0.380) 9.91 (0.390) 5? max. 4.57 (0.180) max. 0.20 (0.008) 0.33 (0.013) 3.81 (0.150) max. 1.02 (0.040) typ. 2.29 (0.090) 2.79 (0.110) 0.51 (0.020) min. 7.36 (0.290) 7.87 (0.310) 0.20 (0.008) 0.33 (0.013)
5 electrical specifications t a =-55c to +125c, unless otherwise specified. see note 9. parameter sym. group a, sub-group test conditions min. typ.* max. units fig. notes output withstand voltage |v o(off) |1, 2, 3 v f = 0.6 v, i o = 10 a90110 v5 output on-resistance connection a r (on) 1, 2, 3 i f = 10 ma, i o = 800 ma, (pulse duration 30 ms 0.40 1.0 ? 6, 7 3, 11 i f = 5 ma, i o = 800 ma, (pulse duration 30 ms 1.0 3, 10 connection b i f = 10 ma, i o = 1.6 a, (pulse duration 30 ms 0.12 0.25 3, 11 i f = 5 ma, i o = 1.6 a, (pulse duration 30 ms 0.25 3, 10 output leakage current i o(off) 1, 2, 3 v f = 0.6 v, v o = 90 v 10 -4 10 a 8 input forward voltage v f 1, 2, 3 i f = 10 ma 1.0 1.24 1.7 v 9 11 i f = 5 ma 10 input reverse breakdown voltage v r 1, 2, 3 i r = 100 a5.0 v input-output insulation i i-o 1rh 65%, t = 5 s, v i-o = 1500 vdc, t a = 25c 1.0 a 4, 5 turn on time t on 9, 10, 11 i f = 10 ma, v dd = 28 v, i o = 800 ma 1.25 6.0 ms 1, 10, 11, 12, 13 11 i f = 5 ma, v dd = 28 v, i o = 800 ma 6.0 10 turn off time t off 9, 10, 11 i f = 10 ma, v dd = 28 v, i o = 800 ma 0.02 0.25 ms 1, 10, 14, 15 11 i f = 5 ma, v dd = 28 v, i o = 800 ma 0.25 10 output transient rejection dvo dt 9v peak = 50 v, c m = 1000 pf, c l = 15 pf, r m 1 m ? 1000 v/ s17 input-output transient rejection dvio dt 9v dd = 5 v, v i-o(peak) = 50 v, r l = 20 k ? , c l = 15 pf 500 v/ s18
6 typical characteristics all typical values are at t a = 25c, i f (on) = 10 ma, v f (off) = 0.6 v unless otherwise specified. notes: 1. maximum junction to case thermal resistance for the device is 15c/w, where case temperature, t c , is measured at the center of the package bottom. 2. for rating, see figure 4. the output power p o rating curve is obtained when the part is handling the maximum average output current i o as shown in figure 2. 3. during the pulsed r on measurement (i o duration <30 ms), ambient (t a ) and case temperature (t c ) are equal. 4. device considered a two terminal device: pins 1 through 4 shorted together and pins 5 through 8 shorted together. 5. this is a momentary withstand test, not an operating condition. 6. for a faster turn-on time, the optional peaking circuit shown in figure 1 may be implemented. 7. v os is a function of i f , and is defined between pins 5 and 8, with pin 5 as the reference. v os must be measured in a stable ambient (free of temperature gradients). 8. zero-bias capacitance measured between the led anode and cathode. 9. standard parts receive 100% testing at 25c (subgroups 1 and 9). smd, class h and class e parts receive 100% testing at 25c , 125c and -55c (subgroups 1 and 9, 2 and 10, 3 and 11 respectively). 10. applies to hssr-7112 and 5962-9314002hxx devices only. 11. applies to hssr-7110, hssr-7111, hssr-711e, 5962-9314001hxx and 5962-9314001exx devices only. parameter symbol test conditions typ. units fig. notes output off-capacitance c o(off) v o = 28 v, f = 1 mhz 145 pf 16 output offset voltage |v os |i f = 10 ma, i o = 0 ma 2 v 19 7 input diode temperature coefficient ? v f / ? t a i f = 10 ma -1.4 mv/c input capacitance c in v f = 0 v, f = 1mhz 20 pf 8 input-output capacitance c i-o v i-o = 0 v, f = 1 mhz 1.5 pf 4 input-output resistance r i-o v i-o = 500 v, t = 60 s 10 13 ? 4 turn on time with peaking t on i fpk = 100 ma, i fss = 10 ma v dd = 28 v, i o = 800 ma 0.22 ms 1 6 figure 1. recommended input circuit. r1 = required current limiting resistor for i f (on) = 10 ma. r2 = pull-up resistor for v f (off) < 600 mv; i f (v cc -v oh ) < 600 mv, omit r2. r3, c = optional peaking circuit. typical values r3 ( ? ) i f (pk) (ma) hssr-7110 t on (ms) - 330 100 33 10 (no pk) 20 40 100 2.0 1.0 0.48 0.22 * use second gate if i f (pk) > 50 ma reminder: tie all unused inputs to ground or v cc in 1/4 54actoo* 1/4 54actoo v cc (+5v) r2 1200 ? r1 330 ? r3 c 15 f hssr-7110 2 3 4 1 6 7 5 8 - i f v f +
7 figure 2. maximum average output current rating vs. ambient temperature. figure 3. single shot (non-repetitive) output current vs. pulse duration. figure 4. output power rating vs. ambient temperature. figure 6. normalized typical output resistance vs. temperature. figure 5. normalized typical output withstand voltage vs. temperature. figure 7. typical on state output i-v characteristics. figure 9. typical input forward current vs. input forward voltage. figure 8. typical output leakage current vs. temperature. 0 -55 t a - ambient temperature - ?c 1.0 0.4 155 125 95 65 5 -25 0.6 0.8 0.2 35 i o - output current - a connection - a i f 10 ma ca = 40? c/w ca = 80? c/w i opk surge - output current - a 3 1000 pulse duration - ms 8 5 400 200 6 7 4 9 10 11 12 600 800 i f 10 ma connection-a connection-b 10 0 -55 t a - ambient temperature - ?c 1.0 0.4 155 125 95 65 5 -25 0.6 0.8 0.2 35 p o - output power dissipation - w connection - a i f 10 ma ca = 40? c/w ca = 80? c/w v f = 0.6 v i o = 10 a -55 t a - ambient temperature - ?c 125 95 65 5 -25 0.92 35 normalized typical output withstand voltage 0.94 0.96 0.98 1.00 1.02 1.04 1.06 1.08 1.10 normalized typical output resistance -55 t a - ambient temperature - ?c 125 95 65 5 -25 0.6 35 0.8 1.0 1.2 1.4 1.6 1.8 connection - a i f 10 ma i o = 800 ma (pulse duration 30 ms) v o - output voltage - v i o - output current - a -0.6 0.6 0.4 0.2 -0.2 -0.4 -0.4 0 -0.2 0 0.2 0.4 0.6 0.8 -0.8 -0.6 connection - a i o 10 ma i o (pulse duration 30 ms) t a = 25?c t a = 125?c t a = -55?c -11 10 -7 10 -8 10 -9 10 -10 10 i o(off) - output leakage current - a t a - temperature - ?c 125 95 65 20 35 connection a v f = 0.6 v v o = 90 v t a = 25?c t a = 125?c t a = -55?c v f - input forward voltage - v 0.6 1.6 1.4 1.2 0.8 0.4 1.0 -1 10 -2 10 -4 10 -3 10 -5 10 -6 10 i f - input forward current - a
8 figure 10. switching test circuit for t on , t off . figure 11. typical turn on time vs. temperature. figure 12. typical turn on time vs. input current. figure 13. typical turn on time vs. voltage. figure 14. typical turn off time vs. temperature. figure 15. typical turn off time vs. input current. figure 16. typical output off capacitance vs. output voltage. 50% 10% 50% 90% t on t off p.w. = 15 ms v o i f pulse gen. z o = 50 ? t f = t r = 5 ns r l gnd (c l includes probe and fixture capacitance) v dd c l = 25 pf i f monitor r (monitor) 200 ? gnd monitor node v o hssr-7110 2 3 4 1 6 7 5 8 - i f v f + t a - temperature - ?c 0.8 2.2 2.0 1.8 1.6 1.4 1.2 1.0 2.4 2.6 t on - turn on time - ms -55 125 95 65 5 -25 35 connection a i f = 10 ma v dd = 28 v i o = 800 ma i f - input current - ma 10 15 20 5 0.2 2.2 1.8 1.4 1.0 0.6 2.6 3.0 t on - turn on time - ms connection a v dd = 28 v i o = 800 ma t a = 25?c v dd - voltage - v 10 30 20 0 0 1.0 0.8 0.6 0.4 0.2 1.2 1.4 t on - turn on time - ms 90 80 70 60 50 40 2.0 1.8 1.6 connection - a i f = 10 ma i o = 800 ma t a = 25?c t a -temperature - ?c 13.2 14.6 14.4 14.2 14.0 13.8 13.6 13.4 14.8 15.0 t off - turn off time - s -55 125 95 65 5 -25 35 connection a i f = 10 ma v dd = 28 v i o = 800 ma 5 40 35 30 25 20 15 10 45 t off - turn off time - s i f - input current - ma 10 15 20 5 connection a v dd = 28 v i o = 800 ma t a = 25?c v o(off) - output voltage - v 515 10 0 120 320 280 240 200 160 360 400 30 25 20 440 c o(off) - output off capacitance - pf connection a f = 1 mhz t a = 25?c
9 figure 17. output transient rejection test circuit. monitor node - pulse generator v peak + c m includes probe and fixture capacitance r m includes probe and fixture resistance c m r m input open v m hssr-7110 2 3 4 1 6 7 5 8 - i f v f + v peak t f t r 90% 10% 90% 10% v m overshoot on v peak is to be 10%. d t dv o or = t f (0.8) v (peak) t r (0.8) v (peak) (max) 5 v v i-o pulse generator + (c l includes probe plus fixture capacitance ) v o c l s 1 v dd v in b a r l - hssr-7110 2 3 4 1 6 7 5 8 - i f v f + overshoot on v i-o(peak) is to be 10% t f t r dt dv i-o or = (0.8) v i-o(peak) (0.8) v i-o(peak) t f t r 90% 10% 90% 10% v i-o(peak) v o(off) v o(off) (min) 3.25 v s 1 at a (v f = 0 v) v o(on) (max) 0.8 v o(on) s 1 at b (i f = 10 ma) 11 or (i f = 5 ma) 10 figure 18. input-output transient rejection test circuit.
10 figure 19. voltage offset test setup. figure 20. burn-in circuit. figure 21. thermal model. t je = led junction temperature t jf1 = fet 1 junction temperature t jf2 = fet 2 junction temperature t jd = fet driver junction temperature t c = case temperature (measured at center of package bottom) t a = ambient temperature (measured 6" away from the package) ca = case-to-ambient thermal resistance all thermal resistance values are in ?c/w t je ca 104 15 t a t c t jd t jf1 15 15 t jf2 note: in order to determine v be measured for the burn-in boards to be used. then, knowing correct output current per figures 2 and 4 to insure that the device meets the derating requirements as shown. out correctly, the case to ambient thermal impedance must ca , determine the 2 3 4 1 6 7 5 8 r in v in 5.5 v 1.0 ? r out v o (see note) 200 ? 1.0 ? r out hssr-7110 applications information thermal model the steady state thermal model for the hssr-7110 is shown in figure 21. the thermal resistance values given in this model can be used to calculate the temperatures at each node for a given operating condition. the thermal resistances between the led and other internal nodes are very large in comparison with the other terms and are omitted for simplicity. the components do, however, interact indirectly through ca , the case-to-ambient thermal resistance. all heat generated flows through ca , which raises the case temperature t c accordingly. the value of ca depends on the conditions of the board design and is, therefore, determined by the designer. the maximum value for each output mosfet junction-to- case thermal resistance is specified as 15c/w. the thermal resistance from fet driver junction-to-case is also 15c/w. the power dissipation in the fet driver, however, is negligible in comparison to the mosfets. on-resistance and rating curves the output on-resistance, r on , specified in this data sheet, is the resistance measured across the output contact when a pulsed current signal (i o = 800 ma) is applied to the output pins. the use of a pulsed signal ( 30 ms) implies that each junction temperature is equal to the ambient and case temperatures. the steadystate resistance, r ss , on the other hand, is the value of the resistance measured across the output contact when a dc current signal is applied to the output pins for a duration sufficient to reach thermal equilibrium. r ss includes the effects of the temperature rise of each element in the thermal model. rating curves are shown in figures 2 and 4. figure 2 specifies the maximum average output current allowable for a given ambient temperature. figure 4 specifies the output power dissipation allowable for a given ambient temperature. above 55c (for ca = 80c/ w) and 107c (for ca = 40c/w), the maximum allowable output current and power dissipation are related by the expression r ss = p o (max)/ (i o (max)) 2 from which r ss can be calculated. staying within the safe area assures that the steady-state junction temperatures remain less than 150c. as an example, for t a = 95c and ca = 80c/w, figure 2 shows v os + digital nanovoltmeter isothermal chamber hssr-7110 2 3 4 1 6 7 5 8 - i f + -
11 that the output current should be limited to less than 610 ma. a check with figure 4 shows that the output power dissipation at t a = 95c and i o = 610 ma, will be limited to less than 0.35 w. this yields an r ss of 0.94 ? . design considerations for replacement of electro-mechanical relays the hssr-7110 family can replace electro-mechanical relays with comparable output voltage and current ratings. the following design issues need to be considered in the replacement circuit. input circuit: the drive circuit of the electro- mechanical relay coil needs to be modified so that the average forward current driving the led of the hssr- 7110 does not exceed 20 ma. a nominal forward drive current of 10 ma is recommended. a recommended drive circuit with 5 volt v cc and cmos logic gates is shown in figure 1. if higher v cc voltages are used, adjust the current limiting resistor to a nominal led forward current of 10 ma. one important consideration to note is that when the led is turned off, no more than 0.6 volt forward bias should be applied across the led. even a few microamps of current may be sufficient to turn on the hssr- 7110, although it may take a considerable time. the drive circuit should maintain at least 5 ma of led current during the on condition. if the led forward current is less than the 5 ma level, it will cause the hssr-7110 to turn on with a longer delay. in addition, the power dissipation in the output power mosfets increases, which, in turn, may violate the power dissipation guidelines and affect the reliability of the device. output circuit: unlike electromechanical relays, the designer should pay careful attention to the output on- resistance of solid state relays. the previous section, on- resistance and rating curves describes the issues that need to be considered. in addition, for strictly dc applications the designer has an advantage using connection b which has twice the output current rating as connection a. furthermore, for dc-only applications, with connection b the on-resistance is considerably less when compared to connection a. output over-voltage protection is yet another important design consideration when replacing electro-mechanical relays with the hssr-7110. the output power mosfets can be protected using metal oxide varistors (movs) or transzorbs against voltage surges that exceed the 90 volt output withstand voltage rating. examples of sources of voltage surges are inductive load kickbacks, lightning strikes, and electro-static voltages that exceed the specifications on this data sheet. for more information on output load and protection refer to application note 1047. references: 1. application note 1047, low on-resistance solid state relays for high reliability applications. 2. reliability data for hssr- 7110. mov is a registered trademark of ge/ rca solid state. transzorb is a registered trademark of general semiconductor. mil-prf-38534 class h, class e and dscc smd test program class h: agilent technologies hi-rel optocouplers are in compliance with mil-prf- 38534 class h. class h devices are also in compliance with dscc drawing 5962- 93140. testing consists of 100% screening and quality conformance inspection to mil-prf-38534. class e: class e devices are in compliance with dscc drawing 5962-9314001exx. agilent technologies has defined the class e device on this drawing to be based on the class k requirements of mil-prf- 38534 with exceptions. the exceptions are as follows: 1. nondestructive bond pull, test method 2023 of mil- std-883 is device screening is not required. 2. particle impact noise detection (pind), test method 2020 of mil-std- 883 in device screening and group c testing is not required. 3. die shear strength, test method 2019 of mil-std- 883 in group b testing is not required. 4. internal water vapor content, test method 1018 of mil-std-883 in group c testing is not required. 5. scanning electron microscope (sem) inspections, test method 2018 of mil-std-883 in element evaluation is not required.
www.agilent.com/ semiconductors for product information and a complete list of distributors, please go to our web site. for technical assistance call: americas/canada: +1 (800) 235-0312 or (408) 654-8675 europe: +49 (0) 6441 92460 china: 10800 650 0017 hong kong: (+65) 6756 2394 india, australia, new zealand: (+65) 6755 1939 japan: (+81 3) 3335-8152(domestic/inter- national), or 0120-61-1280(domestic only) korea: (+65) 6755 1989 singapore, malaysia, vietnam, thailand, philippines, indonesia: (+65) 6755 2044 taiwan: (+65) 6755 1843 data subject to change. copyright ? 2004 agilent technologies, inc. november 18, 2004 5989-1944en

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